|장소||E6-2 #1323 (1st floor)|
|일시||Sep. 29th(Thu), 4PM|
|연사||Dr. Sangyoon Han, Department of Physics, KAIST|
Large-scale Silicon Photonic MEMS Switches
Sep. 29th(Thu), 4PM, E6-2 #1323 (1st floor)
Dr. Sangyoon Han, Department of Physics, KAIST
Fast optical-circuit-switches (OCS) having a large number of ports can significantly enhance the performance and the efficiency of modern data centers by actively rearranging network patterns. Commercially available optical switches operating with the use of moving mirror arrays have port counts exceeding 100x100 and insertion losses fewer than a few dBs. However, their switching speeds are typically tens-of-milliseconds which limits their applications in highly dynamic traffic patterns.
Recently, optical switches based on silicon photonics technology have been designed and built. Silicon photonic switches with microsecond or nanosecond response times have been demonstrated, and silicon photonic switches with integrated CMOS driving circuits have been demonstrated. However, the demonstrations were mostly limited to a small number of ports due to their cascaded 2x2 architecture which induces high optical losses as port-count increases. Moreover, the demonstrations were limited to single polarization operations, and narrow spectral bandwidths.
In this talk, I will introduce a new architecture for silicon photonic switches that is highly scalable (optical insertion loss < 1 dB regardless of port-count), polarization-insensitive (< 1dB of PDL), and ultra-broadband (~300nm). The new architecture uses a two-level waveguide-crossbar with moving waveguide couplers that configure light paths. Three experimental implementations of the new architecture with 50x50 ports will be shown in the talk.
Sangyoon Han is a postdoctoral research associate in the Physics department at KAIST. He received his Ph.D. in Electrical Engineering and Computer Sciences from the University of California, Berkeley in 2016. He received his B.S. in Electrical Engineering from Seoul National University. He was a recipient of Korea Foundation for Advanced Studies Scholarship for study abroad, and he was a recipient of a graduate bronze medal from Collegiate Inventors Competition (USPTO sponsored) in 2015.
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|공지||2018/03/05 - 06/04||Seminar Room 1501||정수영 박사 (KIST) and etc.||Spring 2018: Physics Colloquium|
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|177||Thursday, December 14, 2017 at 3:00 pm||Seminar Room (C303), Creation Hall (3F), KAIST Munji Campus||Chunglee Kim (KASI)||Exploring the Universe via GWs in the era of multi-messenger astronomy|
|»||Sep. 29th(Thu), 4PM||E6-2 #1323 (1st floor)||Dr. Sangyoon Han, Department of Physics, KAIST||Large-scale Silicon Photonic MEMS Switches|
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|174||Sep. 26 (Tue.), 11AM||#1323 (E6-2. 1st fl.)||Dr. Yukiaki Ishida / ISSP, University of Tokyo||Time-resolved ARPES study of Dirac and topological materials|
|173||Sep. 22, 2016(Thu), 3:30 PM||#1323(E6-2, 1st fl.)||Dr. Haiyang Yan (Institute of Nuclear Physics and Chemistry)||Polarized 3He, Polarized Neutrons and New Interactions beyond the Standard Model|
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|170||Sep. 22 (Fri.), 02:30 PM||E6-2. 1st fl. #1323||Dr. GilHo Lee / Department of Physics, POSTECH||Quantum Electronic Transport in Graphene Hybrid Nanostructures|
|169||Sep. 22 (Fri.), 01:00 PM||E6-2. 1st fl. #1323||Dr. EunSeong Kim / Department of Physics, KAIST||Superconductor-metal-insulator transition in thin Tantalum films|
|168||Sep. 13 (Wed.), 4 PM||#1323 (E6-2. 1st fl.)||Prof. Yi. Zhou (The Zhejiang Univ.)||An Introduction to Quantum Spin Liquids|
|167||Sep. 12 (Tue.), 4 PM||#1323 (E6-2. 1st fl.)||Prof. Yi. Zhou (The Zhejiang Univ.)||Exact Solution for the Interacting Kitaev Chain at Symmetric Point|
|166||Sep. 02(Fri) 4:00 PM||E6-2(1st fl) #1323||Dr. Yong-Joo Doh, Department of Physics and Photon Science, GIST||Quantum Electrical Transport in Topological Insulator Nanowires|
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|163||Oct. 18 (Tue.), 3PM||E6-2. 1st fl. #1323||Dr. JunHo Suh, Korea Research Institute of Standards and Science||“Hybrid quantum systems with mechanical oscillators”|
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|161||Oct. 17th (Mon) 11:00 AM||#1323,(E6-2, 1st fl.)||Nguyen Quang Liem, Institute of Materials Science, VAST, Viettnam||IMS and examples of the studies on optoelectronic materials|
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