|일시||Sep. 30 (Fri.), 04:00 PM|
|장소||E6-2. 1st fl. #1323 & Zoom|
|연사||Dr. Byong-Guk Park (Materials Science and Engineering,KAIST)|
“Spin-orbit torque-based spintronic devices”
Dr. Byong-Guk Park
Materials Science and Engineering, KAIST
Sep. 30 (Fri.), 04:00 PM
E6-2. 1st fl. #1323
Spin-orbit torque (SOT) arising from spin-orbit coupling has gained much attention because it promises efficient magnetization switching in spintronic devices . However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is required to achieve deterministic switching, and this is detrimental for device applications. Therefore, it is of crucial importance to find a way of field-free SOT switching of perpendicular magnetization along with reducing the switching current density for the widespread application of SOT technology.
In this talk, I first present various SOT materials which efficiently generated spin currents and associated SOTs to reduce field-free switching current . Then, I will also show SOT-based spintronic devices such as MRAM-based process-in-memory  and physically unclonable functions (PUF) .
 J. Ryu, et al, Adv, Mater. 32, 1907148 (2020)
 S.C. Baek, et al. Nat. Mater. 17, 509 (2018), J. Ryu, et al, Nat. Electron. 5, 217 (2022)
 M.-G. Kang, Nat. Commun. 12, 7111 (2021)
 S. Lee, et al. Adv, Mater. (in press)
Contact: SunYoung Choi, (email@example.com)
Center for Quantum Coherence in Condensed Matter, KAIST